vishay bat15v-02v document number 85641 rev. 1.1, 14-may-04 vishay semiconductors www.vishay.com 1 18346 12 electrostatic sensitive device. observe precautions for handling. 1 2 rf small signal schottky diode description designed for rf-signal level detection and rf-mixer application the low barrier schottky diode bat15v- 02v can be used in wireless and mobile systems up to 12 ghz. the small space saving sod-523 package is a con- tribution to the continuously growing integration den- sity on the pcb and the increasing quality standards. on the electrical side the sod-523 package is char- acterized by low inductance and capacitance. features ? low barrier schottky diode small, space saving sod-523 package with low series inductance small capacitance applications mixer application up to 12 ghz rf-signal level detection mechanical data case: plastic case (sod-523) weight: approx. 1.6 mg cathode band color: laser marking packaging codes/options: gs18 / 10 k per 13" reel (8 mm tape), 10 k/box gs08 / 3 k per 7" reel (8 mm tape), 15 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c, unless otherwise specified part ordering code marking remarks bat15v-02v BAT15V-02V-GS18 or bat15v-02v-gs08 u tape and reel parameter test condition symbol value unit reverse voltage v r 4v forward current i f 100 ma junction temperature t j 150 c storage temperature range t stg -55 to +150 c parameter test condition symbol value unit junction soldering point r thjs 100 k/w
www.vishay.com 2 document number 85641 rev. 1.1, 14-may-04 vishay bat15v-02v vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics (t amb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit reverse voltage i r = 5 av r 4v forward voltage i f = 1 ma v f 0.32 v i f = 10 ma v f 0.41 v diode capacitance f = 1 mhz, v r = 0 c d 0.35 pf forward resistance i f = 20 ma to i f = 50 ma, f = 100 mhz r f 6 ? fig. 1 forward resistance vs. forward current fig. 2 diode capacitance vs. reverse voltage 1 10 100 1000 0.1 1.0 10 100 18397 i f - forward current ( ma ) r - forward resistance ( ) f ? f = 100 mhz 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 012345 18399 v r - reverse v oltage (v) c - diode capacitance ( pf ) d f= 1mhz fig. 3 forward current vs. forward voltage fig. 4 reverse voltage vs. reverse current i - forward current ( ma ) 0.01 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1.0 v f - forward voltag e(v) 18398 f 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 1000 18400 i r - reverse current ( a) v - reverse voltag e(v) r
vishay bat15v-02v document number 85641 rev. 1.1, 14-may-04 vishay semiconductors www.vishay.com 3 package dimensions in mm (inches) 16864 iso method e 1.6 (0.062) 1.2 (0.047) 0.3 (0.012) 0.15 (0.006) 0.6 (0.023) 0.8 (0.031) 0.15 a a 0.35 (0.014) 1.35 (0.053) 0.22 (0.008) 0.16 (0.006) 0.35 (0.014) mounting pad layout
www.vishay.com 4 document number 85641 rev. 1.1, 14-may-04 vishay bat15v-02v vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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